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AEF
| Model： | G10N10A |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| Description： | N100V,RD(MAX)13 |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| Quantity： | 5794 |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$0.5800
$0.5800
10
$0.4900
$4.9000
100
$0.3400
$34.0000
500
$0.2700
$135.0000
1000
$0.2200
$220.0000
2500
$0.1900
$475.0000
5000
$0.1800
$900.0000
12500
$0.1700
$2,125.0000
25000
$0.1700
$4,250.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2A, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
